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HongKong Wei Ya Hua Electronic Technology Co.,Limited
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TO-247HV IGBT Transistor Module IXYH30N450HV 4500 V 60 A 430 W Through Hole

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TO-247HV IGBT Transistor Module IXYH30N450HV 4500 V 60 A 430 W Through Hole

Brand Name : IXYS

Model Number : IXYH30N450HV

MOQ : 50pcs

Price : Negotiable

Supply Ability : 1000000pcs

Voltage - Collector Emitter Breakdown (Max) : 4500 V

Current - Collector (Ic) (Max) : 60 A

Current - Collector Pulsed (Icm) : 200 A

Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 30A

Power - Max : 430 W

Test Condition : 960V, 30A, 10Ohm, 15V

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IXYH30N450HV IGBT PT 4500 V 60 A 430 W Through Hole TO-247HV

IXYS IXYT30N450HV & IXYH30N450HV XPT™ IGBTs

IXYS IXYT30N450HV and IXYH30N450HV High-Voltage XPT™ IGBTs feature a 4.5kV maximum collector-emitter voltage and a 3.9V maximum collector-emitter saturation voltage. IXYS IXYT30N450HV and IXYH30N450HV IGBTs offer a low gate drive requirement and 430W power density. The series is ideal for use in switch-mode and resonant-mode power supplies as well as capacitor discharge circuits, AC switches, and more.

FEATURES

  • High voltage packages
  • High blocking voltage
  • High peak current capability
  • Low saturation voltage
  • Advantages
    • Low gate drive requirement
    • High power density (430W)

APPLICATIONS

  • Switch-mode and resonant-mode power supplies
  • Uninterruptible power supplies
  • Laser generators
  • Capacitor discharge circuits
  • AC switches

SPECIFICATIONS

  • 4.5kV maximum collector-emitter voltage
  • 3.9V maximum collector-emitter saturation voltage
  • 200A maximum continuous collector current
  • 30A continuous collector current at +110°C

Product Tags:

TO-247HV IGBT Transistor Module

      

430W IGBT Transistor Module

      

IXYH30N450HV

      
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